Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
Identifieur interne : 004344 ( Main/Repository ); précédent : 004343; suivant : 004345Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
Auteurs : RBID : Pascal:10-0478790Descripteurs français
- Pascal (Inist)
- Endommagement, Evaluation performance, Défaillance, Analyse signature, Effet électrooptique, Diode électroluminescente, Caractéristique électrique, Caractéristique optique, Essai vieillissement accéléré, Courant fuite, Fluorescence, Spectre émission, Déplacement fréquence, Perte optique, Siloxane polymère, Revêtement, Nitrure de gallium, Composé binaire, Puits quantique multiple, Composé ternaire, Nitrure d'indium, Polymère, 8107S, GaN, InGaN.
- Wicri :
- concept : Polymère.
English descriptors
- KwdEn :
- Accelerated aging test, Binary compound, Coatings, Damaging, Electrical characteristic, Electrooptical effect, Emission spectrum, Failures, Fluorescence, Frequency shift, Gallium nitride, Indium nitride, Leakage current, Light emitting diode, Multiple quantum well, Optical characteristic, Optical losses, Performance evaluation, Polymer, Signature analysis, Siloxane polymer, Ternary compound.
Abstract
This work presents a physics of failure (POF) methodology coupling failure signatures with physicochemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 °C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003B52
Links to Exploration step
Pascal:10-0478790Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses</title><author><name sortKey="Baillot, R" uniqKey="Baillot R">R. Baillot</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS Laboratory, University of Bordeaux I, UMR 5218, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Deshayes, Y" uniqKey="Deshayes Y">Y. Deshayes</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS Laboratory, University of Bordeaux I, UMR 5218, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Bechou, L" uniqKey="Bechou L">L. Bechou</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS Laboratory, University of Bordeaux I, UMR 5218, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Buffeteau, T" uniqKey="Buffeteau T">T. Buffeteau</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ISM Laboratory, University of Bordeaux I, UMR 5255, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Pianet, I" uniqKey="Pianet I">I. Pianet</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ISM Laboratory, University of Bordeaux I, UMR 5255, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Armand, C" uniqKey="Armand C">C. Armand</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Department of Physics, INSA, 135 Av. de Rangueil</s1><s2>31077 Toulouse</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author><author><name sortKey="Voillot, F" uniqKey="Voillot F">F. Voillot</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Department of Physics, INSA, 135 Av. de Rangueil</s1><s2>31077 Toulouse</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author><author><name sortKey="Sorieul, S" uniqKey="Sorieul S">S. Sorieul</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>CENBG Laboratory, UMR 5797, Chemin du Solarium</s1><s2>33175 Gradignan</s2><s3>FRA</s3><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Gradignan</settlement></placeName></affiliation></author><author><name sortKey="Ousten, Y" uniqKey="Ousten Y">Y. Ousten</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>IMS Laboratory, University of Bordeaux I, UMR 5218, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0478790</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0478790 INIST</idno><idno type="RBID">Pascal:10-0478790</idno><idno type="wicri:Area/Main/Corpus">003B52</idno><idno type="wicri:Area/Main/Repository">004344</idno></publicationStmt><seriesStmt><idno type="ISSN">0026-2714</idno><title level="j" type="abbreviated">Microelectron. reliab.</title><title level="j" type="main">Microelectronics and reliability</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Accelerated aging test</term><term>Binary compound</term><term>Coatings</term><term>Damaging</term><term>Electrical characteristic</term><term>Electrooptical effect</term><term>Emission spectrum</term><term>Failures</term><term>Fluorescence</term><term>Frequency shift</term><term>Gallium nitride</term><term>Indium nitride</term><term>Leakage current</term><term>Light emitting diode</term><term>Multiple quantum well</term><term>Optical characteristic</term><term>Optical losses</term><term>Performance evaluation</term><term>Polymer</term><term>Signature analysis</term><term>Siloxane polymer</term><term>Ternary compound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Endommagement</term><term>Evaluation performance</term><term>Défaillance</term><term>Analyse signature</term><term>Effet électrooptique</term><term>Diode électroluminescente</term><term>Caractéristique électrique</term><term>Caractéristique optique</term><term>Essai vieillissement accéléré</term><term>Courant fuite</term><term>Fluorescence</term><term>Spectre émission</term><term>Déplacement fréquence</term><term>Perte optique</term><term>Siloxane polymère</term><term>Revêtement</term><term>Nitrure de gallium</term><term>Composé binaire</term><term>Puits quantique multiple</term><term>Composé ternaire</term><term>Nitrure d'indium</term><term>Polymère</term><term>8107S</term><term>GaN</term><term>InGaN</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This work presents a physics of failure (POF) methodology coupling failure signatures with physicochemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 °C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0026-2714</s0></fA01><fA02 i1="01"><s0>MCRLAS</s0></fA02><fA03 i2="1"><s0>Microelectron. reliab.</s0></fA03><fA05><s2>50</s2></fA05><fA06><s2>9-11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>21st European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF 2010)</s1></fA09><fA11 i1="01" i2="1"><s1>BAILLOT (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>DESHAYES (Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>BECHOU (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>BUFFETEAU (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>PIANET (I.)</s1></fA11><fA11 i1="06" i2="1"><s1>ARMAND (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>VOILLOT (F.)</s1></fA11><fA11 i1="08" i2="1"><s1>SORIEUL (S.)</s1></fA11><fA11 i1="09" i2="1"><s1>OUSTEN (Y.)</s1></fA11><fA12 i1="01" i2="1"><s1>BUSATTO (Giovanni)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>IANNUZZO (Francesco)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>IMS Laboratory, University of Bordeaux I, UMR 5218, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>ISM Laboratory, University of Bordeaux I, UMR 5255, 351 crs de la Liberation</s1><s2>33405 Talence</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, INSA, 135 Av. de Rangueil</s1><s2>31077 Toulouse</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>CENBG Laboratory, UMR 5797, Chemin du Solarium</s1><s2>33175 Gradignan</s2><s3>FRA</s3><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Dept. of Automation, Electromagnetism, Information Engineering and Industrial Mathematics (DAEIMI), University of Cassino, Via G. Di Biasio 43</s1><s2>03043 Cassino</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>1568-1573</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9626</s2><s5>354000192440040750</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0478790</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronics and reliability</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This work presents a physics of failure (POF) methodology coupling failure signatures with physicochemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 °C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07S</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Endommagement</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Damaging</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Deterioración</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Défaillance</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Failures</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Fallo</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Analyse signature</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Signature analysis</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Análisis firma</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Effet électrooptique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Electrooptical effect</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Efecto electroóptico</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Característica óptica</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Essai vieillissement accéléré</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Accelerated aging test</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Ensayo envejecimiento acelerado</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Courant fuite</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Leakage current</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Corriente escape</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Fluorescence</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Fluorescence</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Fluorescencia</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Spectre émission</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Emission spectrum</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Espectro emisión</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Déplacement fréquence</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Frequency shift</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Desplazamiento frecuencia</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Perte optique</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Optical losses</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Siloxane polymère</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Siloxane polymer</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Siloxano polímero</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Revêtement</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Coatings</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Revestimiento</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé binaire</s0><s5>25</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Binary compound</s0><s5>25</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>25</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>26</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>27</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Ternary compound</s0><s5>27</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>27</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>28</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Indium nitride</s0><s5>28</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>28</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Polymère</s0><s5>29</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Polymer</s0><s5>29</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Polímero</s0><s5>29</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>8107S</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>83</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>15</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>15</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>15</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>16</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>16</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>16</s5></fC07><fN21><s1>312</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010)</s1><s2>21</s2><s3>Monte Cassino Abbey, Gaeta ITA</s3><s4>2010-10-11</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 004344 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 004344 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:10-0478790
|texte= Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
}}
| This area was generated with Dilib version V0.5.77. |  |